| PART |
Description |
Maker |
| KMM53632000BKG KMM53632000BK |
32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM53216004BK KMM53216004BKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM53216004CK KMM53216004CKG |
16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
|
Samsung semiconductor
|
| KMM53616000CKG KMM53616000CK |
16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| M374F3200DJ1-C M374F3280DJ1-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M372F3280DJ3-C M372F3200DJ3-C |
32M x 72 DRAM DIMM with ECC Using 16Mx4, 4K & 8K Refresh, 3.3V
|
SAMSUNG[Samsung semiconductor]
|
| HSD32M32M4V-F10 HSD32M32M4V-F10L HSD32M32M4V-F12 H |
Synchronous DRAM Module 128Mbyte ( 32M x 32-Bit ) 72-Pin SIMM based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
|
| KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| K4S51153PF-YF K4S51153PF K4S51153PF-YPF1L K4S51153 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 FBGA-54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 FBGA-54
From old datasheet system
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HYI25D512800CT-6 HYI25D512800CE-6 HYB25D512800CE-6 |
64M X 8 DDR DRAM, 0.7 ns, PDSO66 PLASTIC, TSOP2-66
64M X 8 DDR DRAM, 0.7 ns, PDSO66 GREEN, PLASTIC, TSOP2-66
DDR SDRAM 64M X 8 DDR DRAM, 0.7 ns, PDSO66
512-Mbit Double-Data-Rate SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM 128M X 4 DDR DRAM, 0.7 ns, PDSO66
DDR SDRAM 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Qimonda AG
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5PS5162GFR-S5L H5PS5162GFR-S5I H5PS5162GFR-S5J H5 |
32M X 16 DDR DRAM, 0.4 ns, PBGA84 7.50 X 12.50 MM, ROHS COMPLIANT, FBGA-84
32M X 16 DDR DRAM, 0.45 ns, PBGA84
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
