| PART |
Description |
Maker |
| M5M54R01J-12 M5M54R01J-15 D98020 |
PTSE 19C 19#20 SKT RECP
From old datasheet system
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| GM71CS17403C GM71CS17403C-5 GM71CS17403C-6 GM71CS1 |
LED T5.5 24V12.5MA RED RoHS Compliant: Yes
4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor Inc.
|
| M5M4V64S20ATP-12 M5M4V64S20ATP-8 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| LC322260J LC322260T-70 LC322260T-80 LC322260J-70 |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Read/Write
CONNECTOR ACCESSORY
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Read/Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode Byte Read/Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| MH4M365CNXJ-5 MH4M365CNXJ-6 MH4M365CNXJ-7 MH4M365C |
HYPER PAGE MODE 150994944-BIT ( 4194304-WORD BY 36-BIT ) DYNAMIC RAM 超页模式150994944位（4194304 - Word6位）动态随机存储器
From old datasheet system
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| LC321664AJ LC321664AM LC321664AT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode / Byte Write
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
|
| EDD1216AASE EDD1216AASE-7A-E EDD1216AASE-6B-E |
ER 3C 3#8 SKT PLUG LINE 8M X 16 DDR DRAM, 0.7 ns, PBGA60
128M bits DDR SDRAM (8M words x 16 bits) 8M X 16 DDR DRAM, 0.75 ns, PBGA60
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EBE52UD6ABSA EBE52UD6ABSA-5C-E EBE52UD6ABSA-4A-E |
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 512MB的DDR2 SDRAM内存的SO - DIMM400字64位，2个等级）
512MB DDR2 SDRAM SO-DIMM (64M words x 64 bits, 2 Ranks) 64M X 64 DDR DRAM MODULE, 0.6 ns, DMA240
|
Elpida Memory, Inc.
|
| TC57512AD-15 TC57512AD-20 |
65536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
65,536 WORDS x 8 BITS CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY
|
ETC
List of Unclassifed Manufacturers
|
