| PART |
Description |
Maker |
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRHG8214 2071 IRHG3214 IRHG4214 IRHG7214 IRHG8214N |
250V 100kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
0.5 A, 250 V, 2.4 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-036AB
250V 1000kRad Hi-Rel Quad N -Channel TID Hardened MOSFET in a MO-036AB package
250V Quad N-Channel MOSFET in a MO-036AB package
RADIATION HARDENED POWER MOSFET THRU-HOLE
From old datasheet system
|
IRF[International Rectifier]
http://
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STS1C1S250 |
N-CHANNEL 250V - 0.9Ohm - 0.75A SO-8 P-CHANNEL 250V - 2.1Ohm - 0.6A SO-8 MESH OVERLAY POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRFN214B IRFN214BTAFP001 |
250V N-Channel B-FET
250V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQP27N25 |
250V N-Channel MOSFET
250V N-Channel MOSFET 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| IRF634 IRF634FP |
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET
N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET
|
TE Connectivity, Ltd.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IRFU214B IRFR214B IRFU214BTUFP001 IRFR214BTMFP001 |
250V N-Channel MOSFET
250V N-Channel B-FET / Substitute of IRFU214 & IRFU214A
250V N-Channel B-FET / Substitute of IRFR214 & IRFR214A
|
http://
Intersil Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRF634S IRF634STRL IRF634STRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=0.45ohm, Id=8.1A)
Power MOSFET(Vdss=250V/ Rds(on)=0.45ohm/ Id=8.1A)
|
IRF[International Rectifier]
|
| FQI2P25 FQB2P25 FQB2P25TM FQI2P25TU |
250V P-Channel QFET
250V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD6N25 FQU6N25TU FQD6N25TF FQD6N25TM |
250V N-Channel QFET
250V N-Channel MOSFET
|
Fairchild Semiconductor
|
| FQT2P25 FQT2P25TF |
250V P-Channel QFET
250V P-Channel MOSFET
|
Fairchild Semiconductor
|
