| PART |
Description |
Maker |
| 2SK3569 |
MOSFET 2SK/2SJ Series
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1N5300 1N5301 1N5287 1N5296 1N5314 1N5313 1N5295 1 |
CURRENT LIMITER FIELD EFFECT DIODES
MOSFET P-CH 45V 230MA TO-92
MOSFET N-CH 200V 120MA TO-92
|
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
Knox Semiconductor Inc
|
| ATT3020 |
(ATT3000 Series) Field-Programmable Gate Arrays
|
Lucent
|
| XC4006E |
XC4000E and XC4000X Series Field Programmable Gate Arrays
|
XILINX
|
| STGW20IH125DF |
1250 V, 20 A IH series trench gate field-stop IGBT
|
ST Microelectronics
|
| MRF186 |
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement-Mode Lateral MOSFET
The RF MOSFET Line RF POWER FIELD-EFFECT TRANSISTOR Channel Enhancement?Mode Lateral MOSFET
|
Motorola, Inc
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW40V60DF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| STGWT30H65FB STGW30H65FB |
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
|
ST Microelectronics
|
