| PART |
Description |
Maker |
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| HMC590 |
high dynamic range GaAs PHEMT MMIC 1 Watt Power Amplifi
|
Hittite Microwave Corporation
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| 2SC5347AF-TD-E 2SC5347AE-TD-E |
High-Frequency Semi-Power Output Stage, Low-Noise Medium Output Amplifi er Applications
|
Sanyo Semicon Device
|
| MCH3007 |
High-Frequency Low-Noise Amplifi er
|
Sanyo Semicon Device
|
| SST12LP10 SST12LP10-QVC SST12LP14A-QVCE-K SST12LP1 |
2.4 GHz High-Linearity Power Amplifier
2.4 GHz High-Power, High-Gain Power Amplifier
|
SST[Silicon Storage Technology, Inc]
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TIM1414-7-252 |
HIGH POWER P1dB=38.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| ES0313-10 |
High Power Switch 0.5 GHz to 4 GHz
|
Micronetics, Inc.
|
| ES0314-20 |
High Power Switch 2 GHz to 18 GHz
|
Micronetics, Inc.
|
| ES0189 |
High Power Switch 2.4 GHz to 2.5 GHz
|
Micronetics, Inc.
|
