| PART |
Description |
Maker |
| K7N403601B K7N403601B-QC13 K7N403609B-QC20 K7N4018 |
128Kx36 & 256Kx18 Pipelined NtRAMTM
256 Megabit, 3.0 Volt-only Page Mode Flash Memory
128Kx36 & 256Kx18 Pipelined NtRAM 128K × 36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K7N403609B06 |
128Kx36 & 256Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7B401825B K7B403625B |
128Kx36 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7N403601A |
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
|
Samsung semiconductor
|
| K7P401823M-HC700 K7P401823M K7P40361823M |
128Kx36 & 256Kx18 Synchronous Pipelined SRAM Data Sheet
256K X 18 STANDARD SRAM, 7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
|
Samsung Electronic
|
| AS7C33128PFS32B AS7C33128PFS32A |
(AS7C33128PFS32A / AS7C33128PFS36A) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
(AS7C33128PFS32B / AS7C33128PFS36B) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor Corporation
|
| CY7C1353B-40AC CY7C1353B-50BGC CY7C1353B-50AC CY7C |
256Kx18 Flow-Through SRAM with NoBL Architecture
|
Cypress Semiconductor Corp.
|
| KM736V789 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| KM736V799 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| KM736V795 |
128Kx36 Synchronous SRAM
|
Samsung Semiconductor
|
| TDC1011B2A TDC1011B2C TDC1011C3C TDC1011B7C TDC101 |
8-BIT, DSP-PIPELINE REGISTER, CDIP24
8-BIT, DSP-PIPELINE REGISTER, CQCC28
|
TRW INC
|
| WCSN0436V1P-166AC WCSN0436V1P WCSN0436V1P-100AC WC |
128Kx36 Pipelined SRAM with NoBL TM Architecture
|
WEIDA[Weida Semiconductor, Inc.]
|
