| PART |
Description |
Maker |
| NTE21128 |
Integrated Circuit NMOS, 128K (16K x 8) UV EPROM
|
NTE[NTE Electronics]
|
| NTE2102 |
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns
Integrated Circuit NMOS / 1K Static RAM (SRAM) / 350ns
|
NTE[NTE Electronics]
|
| NTE3880 |
Integrated Circuit NMOS, 8-Bit Microprocessor (MPU), 4MHz
|
NTE[NTE Electronics]
|
| NTE3882 |
Integrated Circuit NMOS, Counter Timer Control (CTC)
|
NTE[NTE Electronics]
|
| NTE6850 |
Integrated Circuit NMOS, Asynchronous Communications Interface Adapter
|
NTE[NTE Electronics]
|
| NTE6809E NTE6809 |
Integrated Circuit NMOS, 8-Bit Microprocessor (MPU) 集成电路NMOS管，8位微处理器（微）
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| HN27128AP-20 |
16K x 8 nMOS EPROM Memory
|
Hitachi Semiconductor
|
| S3924-256Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
|
Hamamatsu Corporation
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| KA22293 KA22293Q KA2293 |
LINEAR INTEGRATED CIRCUIT
MONOLITHIC INTEGRATED CIRCUIT FOR MUSIC CENTER
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
