PART |
Description |
Maker |
2301 |
2.3 GHz Class C, Common Base; fO (MHz): 0; P(out) (W): 1.5; P(in) (W): 0.24; Gain (dB): 8.5; Vcc (V): 20; Cob (pF): 4; Case Style: 55BT-1 S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.5 Watt - 20 Volts, Class C Microwave 2300 MHz
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MICROSEMI POWER PRODUCTS GROUP Microsemi, Corp. GHZTECH[GHz Technology] GHz Technology, Inc.
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2224-6L |
2000-2400 MHz, Class C, Common Base; fO (MHz): 2400; P(out) (W): 6; P(in) (W): 1.2; Gain (dB): 7; Vcc (V): 22; Case Style: 55LV-1 S BAND, Si, NPN, RF POWER TRANSISTOR 3.3V EconoReset 6 Watts, 22 Volts, Class C Microwave 2200-2400 MHz
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Microsemi, Corp. GHZTECH[GHz Technology]
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MS1007 |
RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS HF 2-30 MHz, Class AB, Common Emitter; fO (MHz): 0; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; Vcc (V): 50; ICQ (A): 100; Case Style: M174 HF BAND, Si, NPN, RF POWER TRANSISTOR
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor 1.7 Watts, 20 Volts, Class A Linear to 2300 MHz
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GHZTECH[GHz Technology]
|
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor 0.3 Watts, 15 Volts, Class A Linear to 2300 MHz
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GHZTECH[GHz Technology]
|
TPR1000 |
Transponder/ 1090 MHz, Class C, Common Base, Pulsed; P(out) (W): 1000; P(in) (W): 250; Gain (dB): 6; Vcc (V): 50; Pulse Width (µsec): 10; Duty Cycle (%): 1; Case Style: 55KV-1 L BAND, Si, NPN, RF POWER TRANSISTOR 1000 Watts, 45 Volts, Pulsed Avionics 1090 MHz high power COMMON BASE bipolar transistor.
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Microsemi, Corp. ETC[ETC] GHZTECH[GHz Technology] List of Unclassifed Manufacturers
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MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
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Microsemi, Corp.
|
1718-32L |
32 W, 24 V, 1750-1850 MHz common base transistor 32 Watt - 24 Volts, Class C Microwave 1750 - 1850 MHz BJT
|
GHZTECH[GHz Technology]
|
UTV120 |
UHF TV 470-860 MHz, Class A, Common Emitter; fO (MHz): 860; P(out) (W): 12; Gain (dB): 8.9; Vcc (V): 26.5; ICQ (A): 1.7; IMD Type (dB): -52; Case Style: 55JT-2 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
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MICROSEMI POWER PRODUCTS GROUP GHz Technology Microsemi, Corp.
|
MDS400 |
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 400; P(in) (W): 90; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR 400 Watts Pk, 45 Volts, 32us, 2% Avionics 1030-1090 MHz
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MICROSEMI POWER PRODUCTS GROUP Microsemi, Corp. GHz Technology
|
UTV005 |
COMMON EMITTER transistor 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V
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GHZTECH[GHz Technology]
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