| PART |
Description |
Maker |
| HL6722G |
AlGalnP Laser Diode(AlGalnP激光二极管)
|
Hitachi,Ltd.
|
| DL-3147-041 |
Index Guided AlGalnP Laser Diode 指数导AlGalnP激光二极管
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| DL-3148-023 |
LED Mount; Bulb Size:T-1; LED Color:High Efficiency Red; Luminous Intensity:30mcd; Viewing Angle:45 ; Forward Current:30mA; Forward Voltage:2V; Operating Temperature Range:-40 C to 85 C; Leaded Process Compatible:Yes RoHS Compliant: Yes
AlGalnP Laser Diode
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| NX8349YK |
LASER DIODE 1 271 to 1 331 nm AlGaInAs MQW-DFB LASER DIODE FOR 40 G BASE-LR4 APPLICATION
|
California Eastern Labs
|
| NX7363JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7337BF-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6240GP |
LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION
|
Renesas Electronics Corporation
|
| NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
