PART |
Description |
Maker |
MC100LVEL38 MC100LVEL38DW MC100EL38 MC100EL38DW ON |
, /6 Clock Generation Chip 2, 4/6 Clock Generation Chip From old datasheet system ±2, ±4/6 Clock Generation Chip
|
Motorola, Inc ONSEMI[ON Semiconductor]
|
M5LV-256_104-10VC M5LV-256_104-10VI M5LV-256_104-1 |
7ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) 20ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) 10ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) 12ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device) 15ns fifth generation MACH architecture CPLD (Complex Programmable Logic Device)
|
LATTICE[Lattice Semiconductor]
|
APT30GT60BR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 58A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT20GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 40A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
SI3215-BT SI3215-GT SI3215-KT SI3215-X-FM SI3215-X |
PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, PDSO38 PROSLICPROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38 PROSLIC? PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION PROSLIC垄莽 PROGRAMMABLE CMOS SLIC/CODEC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc. Silicon Laboratories Inc.
|
SI3233-X-GM SI3233-X-FM SI3201-X-FS SI3201-X-GS SI |
PROSLICPROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION TELECOM-SLIC, QCC38 PROSLIC? PROGRAMMABLE CMOS SLIC WITH RINGING/BATTERY VOLTAGE GENERATION
|
Silicon Laboratories, Inc. Silicon Laboratories Inc.
|
STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http:// STMicroelectronics
|
XGIG-B860SA |
xgig? generator sas/sata traffic generation to 6 Gb/s xgig垄莽 generator sas/sata traffic generation to 6 Gb/s
|
Finisar Corporation.
|
APT12GT60BR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs Thunderbolt IGBT 600V 25A The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs
|
ADPOW[Advanced Power Technology]
|
APT40GF120JRD |
The Fast IGBTis a new generation of high voltage power IGBTs ⑩的快速IGBT是一种高压IGBT的新一 The Fast IGBT is a new generation of high voltage power IGBTs Fast IGBT & FRED 1200V 60A
|
Advanced Power Technology, Ltd.
|
APT20GF120BRD |
Fast IGBT & FRED 1200V 32A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
STY80NM60N |
N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh Power MOSFET N-channel 600 V - 0.035 ヘ - 80 A - Max247 second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|