PART |
Description |
Maker |
MGFL45V1920A MGFL45V1920A11 |
1.9-2.0 GHz BAND / 32W
|
Mitsubishi Electric Semiconductor
|
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04 |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC45V4450A_03 MGFC45V4450A MGFC45V4450A03 |
4.4 - 5.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
SY89833L SY89833LMITR SY89833LMI |
3.3V / 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION 3.3V, 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION 3.3V 2GHz ANY-DIFFERENTIAL INPUT-TO-LVDS 1:4 FANOUT BUFFER/TRANSLATOR W/ INTERNAL TERMINATION
|
MICREL[Micrel Semiconductor]
|
SY89856UMG SY89856UMGTR SY89856U |
2GHz, Low-Power, 1:6 LVPECL Fanout Buffer with 2:1 Input MUX and Internal Termination
|
MICREL[Micrel Semiconductor]
|
MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
MGFC36V3742A04 MGFC36V3742A |
3.7 ~ 4.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC36V6472A |
6.4 - 7.2GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC44V6472 |
6.4-7.2GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
MGFC42V6472A |
6.4 - 7.2GHz BAND 16W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V3642_04 MGFC41V3642 |
3.6 - 4.2GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC40V6472_04 MGFC40V6472 MGFC40V647204 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
http:// MITSUBISHI[Mitsubishi Electric Semiconductor]
|