| PART |
Description |
Maker |
| IBM13M32734BCA |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| IBM13M32734BCB |
32M x 72 2-Bank Registered SDRAM Module(32M x 72 2组寄存同步动态RAM模块) 32M × 72配置2，银行注册内存模块（32M × 72配置2组寄存同步动态内存模块）
|
International Business Machines, Corp.
|
| IC-NG |
8-BIT Sin/D CONVERTER-PROCESSOR
|
IC-Haus GmbH
|
| IC-NVH IC-NVHTSSOP20 |
6-BIT Sin/D FLASH CONVERTER
|
IC-Haus GmbH
|
| IC-MGEVALMG1D IC-MGTSSOP20 |
8-Bit Sin/Cos INTERPOLATION IC WITH RS422 DRIVER
|
IC-Haus GmbH
|
| IC-TW2EVALTW22D IC-TW2QFN24 |
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
8-BIT SIN/COS INTERPOLATION IC WITH INTEGRATED EEPROM
|
IC-Haus GmbH
|
| MC-4532DA727PF-A75 MC-4532DA727EF-A75 MC-4532DA727 |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE
32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 DIMM-168
|
NEC Corp.
NEC, Corp.
|
| HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG
Infineon Technologies A...
|
| IBM13N32644JCA-260T IBM13N32734JCA-260T IBM13N3264 |
x64 SDRAM Module
32M x 64 Two-Bank Unbuffered SDRAM Module(32M x 64 2组不带缓的冲同步动态RAM模块)
x72 SDRAM Module x72内存模块
32M x 72 Two-Bank Unbuffered SDRAM Module(32M x 72 2组不带缓冲的同步动态RAM模块) 32M × 72配置双行缓冲内存模组2M × 72配置2组不带缓冲的同步动态内存模块）
|
IBM Microeletronics
DB Lectro, Inc.
International Business Machines, Corp.
|
| KM23V32005BTY KM23V32005BETY |
32M-Bit (4Mx8 /2Mx16) CMOS Mask ROM(32M(4Mx8 /2Mx16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P |
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MBM29PDS322BE10PBT MBM29PDS322BE11 MBM29PDS322BE11 |
32M (2M x 16) BIT Page Dual Operation 2M X 16 FLASH 1.8V PROM, 115 ns, PBGA63
32M (2M x 16) BIT Page Dual Operation 32M的（2米16）位页双操作
NEOZED TYPE,400V.10A 2M X 16 FLASH 1.8V PROM, 100 ns, PBGA63
Replaced by TPS2046B : 0.345A, 2.7-5.5V Dual (1In/2Out) Hi-Side MOSFET, Fault Report, Act-Low Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu, Ltd.
FUJITSU LTD
|
