PART |
Description |
Maker |
N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM 2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
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ON Semiconductor
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HY62U8100B-E HY62U8100B-I HY62U8100BLLG HY62U8100B |
Low Power Slow SRAM - 1Mb 128K x8 bit 3.0V Low Power CMOS slow SRAM x8|3V|70/85/100|Low Power Slow SRAM - 1M
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Hynix Semiconductor
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WMS512K8BV-20E WMS512K8BV-17E WMS512K8BV-17DEMEA W |
20ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 17ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 15ns; low voltage operation: 3.3V -10% power supply; 512K x 8 monolithic SRAM 512K X 8 STANDARD SRAM, 17 ns, CDSO32 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间17ns 512Kx8 Monolithic SRAM(512Kx8单片静态RAM(BiCMOS,存取时间20ns
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White Electronic Designs Corporation
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AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100 Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100 LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100 LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail 3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail NTD? Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. ALSC[Alliance Semiconductor Corporation]
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HY62LF16201ALLF-85 HY62LF16201ALLF-85I HY62LF16201 |
Super Low Power Slow SRAM - 2Mb x16 SRAM
|
Hynix Semiconductor
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HY62SF16201ALLF-85 HY62SF16201ASLF-85 HY62SF16201A |
Super Low Power Slow SRAM - 2Mb x16 SRAM
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Hynix Semiconductor
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HY62V8200B HY62V8200BLLR1 HY62V8200BLLR1-E HY62V82 |
Low Power Slow SRAM - 2Mb HY62V8200B Series 256Kx8bit CMOS SRAM
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Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor] http://
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HM62V16100I HM62V16100LBPI-4 HM62V16100LBPI-4SL HM |
Memory>Low Power SRAM Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit)
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HITACHI[Hitachi Semiconductor] Renesas Electronics Corporation
|
UT6264CPC- UT6264CSC- UT6264CSC-70LL UT6264CSC-70L |
8K X 8 BIT LOW POWER CMOS SRAM 8K的8位低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers N.A. ETC[ETC] UTRON Technology
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UC62LV1024KI-70 UC62LV1024 UC62LV1024AC-55 UC62LV1 |
Low Power CMOS SRAM 低功耗CMOS SRAM
|
Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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AS6UA25616-TI AS6UA25616 AS6UA25616-BC AS6UA25616- |
2.3V to 3.6V 256K×16 Intelliwatt low-power CMOS SRAM with one chip enable(2.3V 3.6V 256K×16 Intelliwatt 低功CMOS 静态RAM(带单片使能 2.3V to 3.6V 256K16 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K6 Intelliwattlow-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K x 16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K16 Intelliwatt low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K】16 Intelliwatt⑩ low-power CMOS SRAM with one chip enable 2.3V to 3.6V 256K×16 Intelliwatt?/a> low-power CMOS SRAM with one chip enable
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Alliance Semiconductor Corporation Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers
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