| PART |
Description |
Maker |
| K7A203200A K7A203200A-10 K7A203200A-14 K7A203200A- |
64Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung semiconductor
|
| KM736V687A |
64Kx36-Bit Synchronous Burst SRAM(64Kx36位同步脉静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM732V696L KM732V696 |
64Kx32 Synchronous SRAM 64Kx32同步SRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG[Samsung semiconductor]
|
| KM736V687A |
64Kx36 Synchronous SRAM
|
Samsung semiconductor
|
| KM736V689A |
64Kx36 Synchronous SRAM
|
Samsung Electronic
|
| K7A203200B K7A203600B-QCI14 K7A203200B-QC14 K7A203 |
64Kx36/x32 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LF6432A-8.5TQI IS61LF6432A-8.5TQLI IS61LF6436A |
64K x 32, 64Kx36 SYNCHRONOUS FLOW-THROUGH STATIC RAM 64K X 36 CACHE SRAM, 8.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
|
| IDT70V9269S IDT70V9269 IDT70V9269L IDT70V9269L12PR |
From old datasheet system
16K x 16 Sync, 3.3V Dual-Port RAM, PipeLined/Flow-Through
HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM 高.3 16K的16 SYNCHRONOU?流水线双端口静态RAM
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| IDT70V3319S133PRFI IDT70V3399S166PRFI IDT70V3319S1 |
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高速与3.3V 3.3V56/128K × 18 SYNCHRONOU S双，端口静态RAM.5V的接
HIGH-SPEED 3.3V 256/128K x 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP128
|
Integrated Device Technology, Inc.
|
| W25X80VZPIZ W25X10 W25X10_07 W25X10VDAC W25X10VDAC |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
WINBOND[Winbond]
|
| AM45DL6408G |
64 Mbit (8 M x 8-Bit/4 M x 16-Bit) CMOS and 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) (Preliminary)
From old datasheet system
|
AMD Inc
|
