PART |
Description |
Maker |
KO3400 AO3400 |
VDS (V) = 30V ID= 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V)
|
TY Semiconductor Co., Ltd
|
75N08 |
VDS=75V,RDS(on)=0.009 VGS=10V,ID=30A VDS=75V,RDS(on)=0.011VGS=4.5V,ID=20A
|
TY Semiconductor Co., Ltd
|
KXU05N25 |
VDS (V) = 250V RDS(ON) 1 (VGS = 10V) Drain-Source Voltage VDSS 250 V
|
TY Semiconductor Co., Ltd
|
PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No System Reset
|
MITSUMI ELECTRIC CO LTD ETC[ETC] Mitsumi Electronics, Corp.
|
KI4562DY |
PIN Configuration Drain-Source Voltage Vds 20V Gate-Source Voltage Vgs -12V
|
TY Semiconductor Co., Ltd
|
KI4501ADY |
TrenchFET Power MOSFET Drain-Source Voltage Vds 30V
|
TY Semiconductor Co., Ltd
|
AM29LV017D-120WCI AM29LV017D-120EC AM29LV017D-120W |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:DPAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:93A; On-Resistance, Rds(on):5.7mohm; Rds(on) Test Voltage, Vgs:10V; Continuous Drain Current - 100 Deg C:66A; Continuous Drain Current - 25 Deg C:93A RoHS Compliant: Yes x8 Flash EEPROM 20V Single N-Channel HEXFET Power MOSFET in a I-Pak package 20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x8闪存EEPROM
|
Advanced Linear Devices, Inc.
|
AF4953P AF4953PS AF4953PSA AF4953PSL AF4953PSLA |
V(ds): -30V; V(gs): -25V; I(s): -2.1A; dual P-channel 30-V (D-S) MOSFET
|
ETC Anachip Corp
|
AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基 1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|