| PART |
Description |
Maker |
| TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
| TC58256FTI |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
Toshiba Semiconductor
|
| JS28F256P33BFA 320003 |
NumonyxTM StrataFlash Embedded Memory P33 (256-Mbit, 256-Mbit/256- Mbit) 130nm to 65nm
|
Numonyx B.V
|
| TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58FVT800F-85 TC58FVT800-10 TC58FVT800-85 TC58FVT |
8 MBIT (1M X 8 BITS / 512K X 16 BITS) CMOS FLASH MEMORY
50 AMP LATCHING POWER RELAY
|
Toshiba Corporation
|
| BL93C56 |
2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
|
SHANGHAI BELLING CO., LTD.
|
| CAT93C56VE-1.8-GT3E CAT93C56ZD4E-1.8-GT2E CAT93C56 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
|
ON Semiconductor
Emulation Technology, Inc.
Electronic Theatre Controls, Inc.
HIROSE ELECTRIC Co., Ltd.
Xiamen Hongfa Electroacoustic Co., Ltd.
ITT, Corp.
|
| HN58C257A HN58C256AFP10 HN58C256AP10 |
256 k EEPROM (32-kword ×8-bit)(256k EEPROM (32k×8)
IC-SM-256K CMOS EEPRM
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
|
Hitachi,Ltd.
|
| DS2430AV DS2430AP DS2430AT DS2430AX |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
256-Bit 1-Wire EEPROM
|
Toshiba, Corp.
Dallas Semiconducotr
Dallas Semiconductor
|
| NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位1千兆位（x8/x1628 Byte/264字的页面1.8V/3V，NAND闪存芯片
128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63
8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
64M X 8 FLASH 3V PROM, 35 ns, PBGA55
64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48
128M X 8 FLASH 3V PROM, 35 ns, PDSO48
8M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PDSO48
32M X 16 FLASH 3V PROM, 35 ns, PBGA55
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
NUMONYX
http://
|
| EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits DDR400)
|
Elpida Memory
|
| EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|
