PART |
Description |
Maker |
SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
IS41C16256-60K IS41LV16256-60K IS41C16256-25TI IS4 |
256K x 16 (4-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 256K × 164兆位)的动态与江户页面模式内存
|
Integrated Circuit Solu... Cypress Semiconductor Corp. Integrated Circuit Solution Inc
|
IC41C16257S-35T IC41C16257S-60TI IC41LV16257S-50K |
256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 256K × 16兆位)充满活力和快速页面模式内 CONNECTOR ACCESSORY
|
Integrated Circuit Solution Inc Electronic Theatre Controls, Inc. Integrated Circuit Solu...
|
MT4C4256 MT4C4256-8 MT4C4256-12 MT4C4256-10 |
256K X 4RAM(FAST PAGE MODE) 256K x 4 DRAM
|
ETC[ETC] Austin Semiconductor List of Unclassifed Manufacturers
|
KM44C256C KM44C256C-6 KM44C256C-7 KM44C256C-8 KM44 |
256k x 4Bit CMOS DRAM with Fast Page Mode 256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode
|
Samsung Electronics Samsung semiconductor
|
V53C16258L V53C16258SLT40 V53C16258SLT45 V53C16258 |
HIGH PERFORMANCE 3.3 VOLT 256K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH 256K X 16 EDO DRAM, 50 ns, PDSO40
|
Mosel Vitelic, Corp. Mosel Vitelic Corp MOSEL-VITELIC
|
V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
KM416C256DLJ-7 KM416V256DLJ-5 KM416C256DLJ-5 KM416 |
256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 50ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 5V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 60ns, 3.3V, self-refresh capability 256K x 16Bit CMOS dynamic RAM with fast page mode, 70ns, 3.3V, self-refresh capability
|
Samsung Electronic
|
A418316S-35 A418316V-35U A418316V-25U |
256K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
|
AMIC Technology Corporation
|
KM41256A KM41257A KM41256AJ-10 KM41256AJ-15 KM4125 |
256K X 1 Bit Dynamic RAM with Page / Nibble Mode
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
LC32464M-80 LC32464P |
256K (65536 words X 4 bits) DRAM Fast Page Mode
|
Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|