| PART |
Description |
Maker |
| MT4C4256 MT4C4256-8 MT4C4256-12 MT4C4256-10 |
256K X 4RAM(FAST PAGE MODE)
256K x 4 DRAM
|
ETC[ETC]
Austin Semiconductor
List of Unclassifed Manufacturers
|
| AS4C256K16E0 |
5V 256K×16 CMOS DRAM (EDO)(5V 256K×16 CMOS动态RAM（扩展数据总线
|
Alliance Semiconductor Corporation
|
| HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
| SMJ44C251B SMJ44C251B-10HJM SMJ44C251B-10HMM SMJ44 |
256K X 4 VRAM 256K x 4 DRAM with 512K x 4 SAM
|
Austin Semiconductor
|
| MT4C16257 |
256K x 16 FPM DRAM(256K x 16快速页面模式动态RAM)
|
Micron Technology, Inc.
|
| UPD424280LV-A70 UPD42S4280LG5-A70 UPD42S4280LG5M-A |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40
256K X 18 FAST PAGE DRAM, 70 ns, PDSO40
256K X 18 FAST PAGE DRAM, 80 ns, PDSO40
256K X 18 FAST PAGE DRAM, 60 ns, PDSO40
|
|
| UPD42S4263AG5-80 UPD42S4263AV-70 UPD42S4263ALE-60 |
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40
256K X 16 FAST PAGE DRAM, 60 ns, PDSO40
256K X 16 FAST PAGE DRAM, 70 ns, PDSO40
|
|
| HYB314171BJL-70 HYB314171BJL-60 HYB314171BJL-50 HY |
256k x 16 Bit FPM DRAM 3.3 V 60 ns
-3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
256k x 16 Bit FPM DRAM 3.3 V 70 ns
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| TC514900AZL-70 TC514260BZLL-70 TC514800AZL-80 TC51 |
512K X 9 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 16 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
512K X 8 FAST PAGE DRAM, 80 ns, PZIP28 ZIP-28
512K X 8 FAST PAGE DRAM, 70 ns, PZIP28 ZIP-28
256K X 18 FAST PAGE DRAM, 80 ns, PZIP40 ZIP-40
256K X 16 FAST PAGE DRAM, 80 ns, PDSO40
|
SIEMENS AG
|
| MT4C16256 |
256K x 16 DRAM (MT4C16256/7/8/9)
|
Micron Technology
|
| MCM51L4256B |
256K x 4 CMOS DRAM
|
Motorola
|
