| PART |
Description |
Maker |
| K6R4016V1D K6R4016V1D-TC10 |
Description = K6R4016V1D 256Kx16 Bit High Speed Static RAM(3.3V Operating)
|
SAMSUNG
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power
512Kx8 bit CMOS static RAM, 100ns, low power
524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM
PT 16C 16#16 PIN PLUG
524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| IDT7015L17PFB IDT7015S17PFB IDT7015L12JB IDT7015S1 |
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 17 ns, PQCC68
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 高K的9双端口静态RAM
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 15 ns, PQFP80
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 35 ns, PQFP80
LED/TAPE AND REEL OR BULK//YELLOW RIGHT ANGLE 8K X 9 DUAL-PORT SRAM, 35 ns, PQCC68
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 12 ns, PQFP80
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 15 ns, CPGA68
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 25 ns, PQFP80
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM 8K X 9 DUAL-PORT SRAM, 12 ns, CPGA68
|
Integrated Device Technology, Inc.
|
| KM684000LI KM684000LI-10 KM684000LI-10L KM684000LI |
512Kx8 bit CMOS static RAM, 85ns, low power
Quadruple Bilateral Analog Switch 14-TSSOP -40 to 85 524288亩字× 8位高速CMOS静态RAM
524,288K WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 524288亩字× 8位高速CMOS静态RAM
RES 1.6K-OHM 1% 0.063W 200PPM THK-FILM SMD-0603 TR-7-PA
512Kx8 bit CMOS static RAM, 100ns, low power
512Kx8 bit CMOS static RAM, 70ns, low power
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6R1008C1D-TC10 K6R1004V1D-KC08 K6R1016V1D-JC10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静态RAM.0V操作）
256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). 256Kx4位（与OE）的高速CMOS静RAM.0V操作）
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K6F4016U4G-EF70 K6F4016U4G K6F4016U4G-EF55 |
256Kx16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6T4016V3BK6T4016U3BFAMILY |
256Kx16 bit Low Power and Low Voltage CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| CXK581000ATM/AYM/AM/AP-10LL CXK581000ATM/AYM/AM/AP |
128K X 8 STANDARD SRAM, 100 ns, PDIP32
128K X 8 STANDARD SRAM, 55 ns, PDSO32 8 X 20 MM, PLASTIC, TSOP1-32
131072-word x 8-bit High Speed CMOS Static RAM
131072-word x 8-bit High Speed CMOS Static RAM
|
Cypress Semiconductor, Corp.
SONY
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D |
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
