| PART |
Description |
Maker |
| 2SD2061 2SD2061F |
TRANSISTOR | 60V V(BR)CEO | 3A I(C) | TO-220FP
Power Transistor(120V/ 7A)
Power Transistor(120V, 7A)
|
Rohm
|
| 2SD1957 A5800391 |
Power Transistor(120V/ 7A)
Power Transistor (120V, 7A)
From old datasheet system
|
ROHM[Rohm]
|
| 2SB1236 |
Power Transistor (-120V , -1.5A)
|
ROHM[Rohm]
|
| CSD363 CSD363O CSD363R CSD363Y |
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 240 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 70 - 140 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 40 - 80 hFE.
40.000W Medium Power NPN Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 120 - 240 hFE.
|
Continental Device India Limited
|
| ZXTN04120HFF ZXTN04120HFFTA |
120V, SOT23F, NPN medium power Darlington transistor
|
Diodes Incorporated
|
| 2SA15381 2SA1538C 2SC3953C 2SA1538E 2SC3953D 2SA15 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 200mA的一（c）|26
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 200MA I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 200mA的一（c）|26
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATIONS
|
Sanyo Semicon Device
|
| ECG105 ECG85 ECG91 ECG90 ECG92 ECG101 |
Pressure (Pa): 770 ( 3.09inchH2O / 75.1 ( 0.30inchH2O ); Noise (dB[A]): 71 / 40; Mass (g): 760;
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 400MA I(C) | TO-92
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 50MA I(C) | TO-92VAR
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 15A I(C) | SIP 晶体管|晶体管| npn型| 200伏五（巴西）总裁| 15A条（c）的|园区
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | TO-5 晶体管|晶体管|叩| 20V的五（巴西）总裁| 300mA的一（c）|
|
NXP Semiconductors N.V.
|
| 2SA1696D 2SA1696C 2SC4473E |
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 400MA I(C) | SOT-186
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 400MA I(C) | SOT-186 晶体管|晶体管| npn型| 120伏特五（巴西）总裁| 400mA的一（c）|的SOT - 186
|
Mospec Semiconductor, Corp.
|
| CSB649AC CSD669AC CSB649D |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 1.5A I(C) | TO-126
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 1.5AI（丙）|126
|
Spansion, Inc.
|
| FQPF32N12V2 FQP32N12V2 |
120V N-Channel Advanced QFET V2 series
120V N-Channel MOSFET 32 A, 120 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| MJ11016G MJ11015G MJ11012G |
Bipolar Power TO3 NPN 30A 120V; Package: TO-204 (TO-3); No of Pins: 2; Container: Tray; Qty per Container: 100 30 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA
High-Current Complementary Silicon Transistors
|
Rectron Semiconductor
|
