PART |
Description |
Maker |
MMFT3055EL |
MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTB75N03HDL MTB75N03HDL_D ON2451 |
TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS From old datasheet system
|
Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
|
PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET From old datasheet system TrenchMOS TM logic level FET TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
MTB10N60E7 ON2391 MTB10N60E7-D MTB10N60E7T4 |
TMOS 7 E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS 7 E-FET High Energy Power FET From old datasheet system TMOS POWER FET 10 AMPERES 600 VOLTS
|
ON Semiconductor
|
MTB16N25E_D ON2396 MTB16N25E MTB16N25E-D MOTOROLAI |
TMOS POWER FET 16 AMPERES 16 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 250 VOLTS TMOS E-FET High Energy Power FET D2PAK for Surface Mount
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
|
MMFT2955E MMFT2955E_D ON2219 ON2218 MMFT2955ET1 |
1200 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA From old datasheet system N-hannel Enhancement-ode Logic Level SOT23 TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
|
MTB2N40E MTB2N40E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 400 VOLTS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
PHP63NQ03LT PHB63NQ03LT PHD63NQ03LT |
TrenchMOS logic level FET 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET TrenchMOS(tm) logic level FET
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MTY16N80E_D MTY16N80E ON2712 MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTP2N60E_D ON2581 MTP2N60 MTP2N60E MTP2N60E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate From old datasheet system TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS
|
ON Semiconductor Motorola, Inc
|