| PART |
Description |
Maker |
| EVAL-RX95HF |
Evaluation board for RX95HF , NOT FOR SALE
|
ST Microelectronics
|
| ANT7-M24LR16E |
15 mm x 15 mm double layer antenna reference board for the M24LR16E-R Dual Interface EEPROM, NOT FOR SALE
|
ST Microelectronics
STMicroelectronics
|
| AT24C04B09 AT24C04B-PU AT24C04B-TH-B AT24C04B-TH-T |
Two-wire Serial EEPROM
8-ULTRA THIN MINI MAP,PB/HALO FREE,1.8V(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, DSO8
8-DBGA2,PB/HALO FREE,1.8V(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, PBGA8
8-PDIP, Pb/HALO FREE, 1.8V(SERIAL EE) 1K X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
DIE SALE,1.8V, 11MIL(SERIAL EE) 512 X 8 I2C/2-WIRE SERIAL EEPROM, UUC
|
ATMEL Corporation
聚兴科技股份有限公司
Atmel, Corp.
|
| 1212691 |
Replacement die - CF 500/DIE RCI 6-1
|
PHOENIX CONTACT
|
| RD25050-W-AU RD25100-W-AU RD251000-W-AU RD25200-W- |
50 V, 25 A, rectifier automotive die
100 V, 25 A, rectifier automotive die
1000 V, 25 A, rectifier automotive die
200 V, 25 A, rectifier automotive die
|
TRANSYS Electronics Limited
|
| IRG4CC50WB |
IGBT Die in Wafer Form 600 V Size 5 WARP Speed
IRG4CC50WB IGBT Die in Wafer Form
|
Hittite Microwave Corporation
International Rectifier
|
| X2864HJ-70 X2864BPI-18 X2864HJ-90 X2864BGM-12 X286 |
10MS, 8 PDIP, IND TEMP, GREEN, 1.8V(SERIAL EE)
10MS, SOT23, IND TEMP, GREEN, 1.8V(SERIAL EE)
32M CONFIG FLASH, 44 PLCC, IND(FPGA)
10 MHZ, 8 LAP, IND TEMP(FPGA)
25NS, 24 SOIC, IND TEMP(EPLD)
10MS, 8 TSSOP, EXT TEMP, 2.7V(SERIAL EE)
DIE SALE,1.8V, 11MIL(SERIAL EE)
10MHZ, 8 PDIP, IND TEMP(FPGA)
10MHZ, 20 PLCC, COM TEMP(FPGA)
10MHZ, 44 TQFP, COM TEMP(FPGA)
128Kx8 EEPROM
20NS,CERDIP,883C; LEV B FULLY COMPLIANT(EPLD)
10MHZ, 20 SOIC, COM TEMP, 5K MOQ(FPGA)
10 MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
30MHZ, 3.3V, 8 LAP, COM TEMP(FPGA) x8的EEPROM
10MHZ, 20 PLCC, IND TEMP(FPGA) x8的EEPROM
30MHZ, 20 PLCC, IND TEMP, GREEN(FPGA) x8的EEPROM
|
ITT, Corp.
Pericom Technology (Shanghai) CO., Ltd.
Diodes, Inc.
Electronic Theatre Controls, Inc.
|
| IRLC1304 2299 |
HEXFET Power MOSFET Die in Wafer Form(晶圆形式的HEXFET 功率MOS场效应管)
From old datasheet system
HEXFET? Power MOSFET Die in Wafer Form
|
International Rectifier
|
| AM29F010-1 AM29F010-120DGC1 AM29F010-120DGE1 AM29F |
1 megabit CMOS 5.0 volt-only, uniform sector flash memory- die revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash MemoryDie Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 120 ns, UUC30
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1 128K X 8 FLASH 5V PROM, 90 ns, UUC30
Evaluation Board for LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers 128K X 8 FLASH 5V PROM, 90 ns, UUC30
LM3202 650mA Miniature, Adjustable, Step-Down DC-DC Converter for RF Power Amplifiers; Package: MICRO SMD; No of Pins: 8
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only Uniform Sector Flash Memory-Die Revision 1
1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory-Die Revision 1
|
ADVANCED MICRO DEVICES INC
PROM
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
FILM/M CAPACITANCE=4.7 VOLT=100
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
|
IXYS, Corp.
ETC[ETC]
IXYS[IXYS Corporation]
|
|
