| PART |
Description |
Maker |
| HY62SF16404D HY62SF16404D-DF85I |
256K X 16 STANDARD SRAM, 85 ns, PBGA48
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX SEMICONDUCTOR INC
|
| LY61L25616GL-10LL LY61L25616GL-12LLET LY61L25616GL |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| LY6125616GL-15E LY6125616GL-10 LY6125616GL-15I |
5V 256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| MB81C84A |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
| LY61L25616 LY61L25616E LY61L25616GL LY61L25616GV L |
256K X 16 BIT HIGH SPEED CMOS SRAM
|
Lyontek Inc.
|
| HM62256BLFP10 HM62256BLFP8 HM62256BLFP-4SLT |
32768-word x 8-bit high speed CMOS static RAM, 45ns
IC-SM-256K CMOS SRAM
|
Hitachi Semiconductor
|
| K6R1016V1D-UI10 K6R1004C1D-JC10 K6R1004C1D-JI10 K6 |
256K X 4 STANDARD SRAM, 10 ns, PDSO32
256K X 4 STANDARD SRAM, 8 ns, PDSO32
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. 64Kx16位高速CMOS静RAM.3V的）在商业和工业温度范围操作
TV 23C 21#20 2#16 SKT PLUG REC
64Kx16 bit high-speed CMOS static RAM operated at commercial and industrial temperature ranges
64Kx16 bit high-speed CMOS static RAM(3.3V Operaing) operated at commercial and industrial temperature ranges
TV 55C 55#22D SKT PLUG RECP
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| HY62LF16404D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF1640 HY62UF16403A HY62UF16403A-I |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| IS61LV2568L-10T-TR IS61LV2568L-8TL IS61LV2568L08 |
256K X 8 STANDARD SRAM, 8 ns, PDSO44 LEAD FREE, PLASTIC, TSOP2-44
256K x 8 HIGH-SPEED CMOS STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| KM641001A |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
