| PART |
Description |
Maker |
| BUV98AVNBSP BUV98AV |
Independent BJT Power Module
From old datasheet system
|
ST Microelectronics
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| MG50G2XXX |
BJT and MOS-BJT Power Module
|
Toshiba
|
| BSM300GB120DLC |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,625A I(C)
|
Eupec
|
| GP300LSS16S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 300A I(C) 晶体管| IGBT功率模块|独立| 1.6KV五（巴西）国际消费电子展| 300我（丙）
|
TE Connectivity, Ltd.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| 2MI50F050 |
TRANSISTOR,MOSFET POWER MODULE,INDEPENDENT,500V V(BR)DSS,50A I(D)
|
fuji
|
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| KD424520 |
TRANSISTOR,BJT POWER MODULE,HALF BRIDGE,DARLINGTON,450V V(BR)CEO,200A I(C)
From old datasheet system
|
Powerex Inc
|
| ETM36-030 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 400V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|达林顿| 400V五（巴西）总裁| 200安培我（丙）
|
Bourns, Inc.
|
| QM30TB2HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CEO | 30A I(C) 晶体管|晶体管电源模块| 3 - PH值大桥| 1KV交五（巴西）总裁| 30A条一（c
|
Mitsubishi Electric, Corp.
|
