| PART |
Description |
Maker |
| ATF22V10 ATF22V10B ATF22V10B-10JC ATF22V10B-10JI A |
High- Performance EE PLD FLASH PLD, 25 ns, PDSO24
High- Performance EE PLD FLASH PLD, 25 ns, PDIP24
Single Supply, Dual SPST Switch FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDIP24
High- Performance EE PLD FLASH PLD, 15 ns, PQCC28
High- Performance EE PLD FLASH PLD, 10 ns, CQCC28
High- Performance EE PLD FLASH PLD, 15 ns, CDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDIP24
High- Performance EE PLD FLASH PLD, 7.5 ns, PDSO24
High- Performance EE PLD FLASH PLD, 10 ns, PDSO24
3.3V, 1 Output, LVTTL to LVPECL Clock Converter
CAP 470PF 16V 5% X7R SMD-0603 TR-7 PLATED-NI/SN
High-performance EE PLD
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
http://
|
| PD488588FF-C80-40-DH1 PD488588FF |
288M bits Direct Rambus DRAM for High Performance Solution
|
ELPIDA[Elpida Memory]
|
| V54C365164 V54C365164VC |
HIGH PERFORMANCE 166/143/125 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
MOSEL[Mosel Vitelic, Corp]
|
| V54C365164VD |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
Mosel Vitelic Corp
|
| V54C365164VL |
HIGH PERFORMANCE 225/200/166/143 MHz 3.3 VOLT 4M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16
|
Mosel Vitelic
|
| V54C365804VB |
High Performance PC100/125MHz 3.3 Volt 8M X 8 Synchronous DRAM(3.3V高性能pc100/125MHz 8Mx8同步动态RAM)
|
Mosel Vitelic, Corp.
|
| MT9LD272G-5B MT18LD472G-5B MT9LD272G-5BN MT9LD272G |
x72 Burst EDO Page Mode DRAM Module x72脉冲EDO页面模式内存模块
|
Fujitsu, Ltd.
|
| HSMH-C220 HSMA-C220 HSMD-C220 HSML-C220 HSMS-C220 |
Agilent HSMH-C220 High Performance ChipLED
Agilent HSMA-C220 High Performance ChipLED
Agilent HSMD-C220 High Performance ChipLED
安捷伦HSML - C220高性能采用的ChipLED
安捷伦硬件安全模 C220高性能采用的ChipLED
安捷伦HSMY - C220高性能采用的ChipLED
Agilent HSMG-C220 High Performance ChipLED 安捷伦HSMG - C220高性能采用的ChipLED
Agilent HSMS-C220 High Performance ChipLED
|
Sanken Electric Co., Ltd.
|
| V53C104A V53C104AK V53C104AK-100 V53C104AK-80 V53C |
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp
|
| M4A3-512_256-10FAC M4A5-96/48-10VC M4A5-96/48-10VI |
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 5.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 10 ns, PQCC44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP44
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP144
High Performance E 2 CMOS In-System Programmable Logic EE PLD, 7.5 ns, PQFP48
CONNECTOR ACCESSORY
CAP 1500UF 100V ELECT KMH SNAP
High Performance E 2 CMOS In-System Programmable Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| GAL16V8A GAL16V8B GAL16V8A-15LPI GAL16V8A-10LJI GA |
HIGH PERFORMANCE E2CMOS PLD EE PLD, 15 ns, PDIP20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 10 ns, PQCC20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 25 ns, PQCC20
HIGH PERFORMANCE E2CMOS PLD EE PLD, 10 ns, PDIP20
HIGH PERFORMANCE E2CMOS PLD E2CMOS的高性能可编程逻辑器件
16 BIT MCU, 32K FLASH
HIGH PERFORMANCE E2CMOS PLD
|
http://
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
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