| PART |
Description |
Maker |
| M41T11MH6E M41T11M6E M41T11MH6TR M41T11M6F |
512 Bit (64B X8) Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| M41T56 M41T56M M41T56MH M41T56SH |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| M41T11MH M41T11SH |
512 bit 64b x8 Serial Access TIMEKEEPER SRAM
|
ST Microelectronics
|
| 1202-052 |
FLTR, SING, PI, BSHG
|
API Technologies Corp
|
| SS443A SS461A-R SS411A-R SS441A-R SS449A |
Hall-Effect Switch 霍尔效应开
IC,HALL-EFFECT SWITCH,SING
|
Honeywell Sensing and Controls
|
| IS24C02A-2GLI IS24C02A IS24C16A-3ZLA3 IS24C02A-2DL |
1K-BIT/2K-BIT/4K-BIT/8K-BIT/16K-BIT 2-WIRE SERIAL CMOS EEPROM
|
ISSI[Integrated Silicon Solution, Inc]
|
| 5962-8766505YA 5962-8766503YA 5962-8766507UA 5962- |
Complete High-Speed CMOS, 12-Bit ADC
CMOS, 8-Bit-Compatible, 12-Bit DAC
CMOS 12-Bit Buffered Multiplying DACs
16-Bit Microprocessor 16位微处理
|
Electronic Theatre Controls, Inc.
|
| W25X80VZPIZ W25X10 W25X10_07 W25X10VDAC W25X10VDAC |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
WINBOND[Winbond]
|
| W25X80 W25X40 W25X40LSSCG W25X40LSSCZ W25X40LSSI W |
1M-BIT, 2M-BIT, 4M-BIT AND 8M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
WINBOND[Winbond]
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGB331S8AKT M6MGT331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
| MC6800 MC6800CL MC6800CP MC6800CS MC6800L MC6800P |
8-BIT MPUS, 8-BIT MCUS, 8-BIT PERIPHERALS
8-BIT MICROPROCESSING UNIT (MPU)
|
MOTOROLA[Motorola, Inc]
|
