| PART |
Description |
Maker |
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| CY7C1041BV33-12 CY7C1041BV33-12ZC CY7C1041BV33-15Z |
Memory : Async SRAMs
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 25 ns, PDSO44
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 17 ns, PDSO44
|
CYPRESS [Cypress Semiconductor]
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| UPD424800G5-10-7JD UPD424800G5-10-7KD UPD424800V-8 |
256K (32K x 8) Static RAM
8K x 8 Static RAM
RoboClock® High-speed Multi-phase PLL Clock Buffer
x8 Fast Page Mode DRAM x8快速页面模式的DRAM
|
NEC TOKIN, Corp.
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
| CYK256K16SCBU-55BVXI CYK256K16SCCBU-55BVI CYK256K1 |
4-Mbit (256K x 16) Pseudo Static RAM 256K X 16 PSEUDO STATIC RAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| MCM63P818 MCM63P736 MCM63P736TQ100 MCM63P736ZP133R |
Circular Connector; Body Material:Aluminum; Series:PT07; No. of Contacts:2; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Jam Nut Receptacle; Circular Contact Gender:Pin; Insert Arrangement:8-2
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 256K X 18 CACHE SRAM, 5 ns, PQFP100
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 4 ns, PBGA119
128K x 36 and 256K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 36 CACHE SRAM, 5 ns, PQFP100
Replaced by PTH12000W :
|
MOTOROLA INC
NEC, Corp.
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| EDI8L32256V15AI EDI8L32256V12AC EDI8L32256V15AC ED |
15ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
12ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
17ns; 3.3V power supply; 256K x 32; 8 megabit CMOS static RAM
|
White Electronic Designs
|
| CY62147EV18LL-55BVXI |
4-Mbit (256K x 16) Static RAM 256K X 16 STANDARD SRAM, 55 ns, PBGA48
|
Cypress Semiconductor Corp.
|
| KM641001B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS61LF51218A-7.5B3 IS61LF51218A-7.5B2 IS61LF51218A |
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 256K X 36 CACHE SRAM, 7.5 ns, PQFP100
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| CY7C1041BN-20VXC CY7C1041BNL-20VXC CY7C1041BN-20VX |
256K x 16 Static RAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp.
SRAM
Cypress Semiconductor, Corp.
|
