PART |
Description |
Maker |
IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBH28N170A |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBF12N300 |
High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBX55N300 |
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
LDNC |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
IXBH5N160G IXBP5N160G |
High Voltage BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|