PART |
Description |
Maker |
BR24L02-W BR24L02F-W BR24L02FJ-W BR24L02FV-W BR24L |
256x8 bit electrically erasable PROM 256x8位电可擦除可编程ROM 256×8 bit electrically erasable PROM 256?8 bit electrically erasable PROM
|
Rohm Co., Ltd. Rohm CO.,LTD.
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ATF16V8B-15PC ATF16V8B ATF16V8B-10PC ATF16V8B/BQ/B |
Electrically-Erasable PLD 电可擦除可编程逻辑器件 ATF16V8B/BQ/BQL [Updated 4/01. 19 Pages] 250 gate electrically erasable PLD. 20 pins From old datasheet system 250 gate electrically erasable PLD, 20 pins
|
Atmel, Corp. Atmel Corp
|
BR24L32 BR24L32FV-W BR24L32FJ-W BR24L32F-W BR24L32 |
4k8 bit electrically erasable PROM 4k】8 bit electrically erasable PROM
|
ROHM[Rohm]
|
24LC32AX 24AA32A 24LC32AT-I_SM 24LC32AT-I_SMG 24LC |
The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I<SUP>2</SUP>C compatible 2-wire serial ... The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial interface bus. The 24AA32A features a page-write capability of up to 32 bytes of data and is capable of both r 32K I2C Serial EEPROM The 24AA32A is a 4K x 8 (32K bit) Serial Electrically Erasable PROM memory with an I2C compatible 2-wire serial ... 32KIC Serial EEPROM 32K 1.8V I2C Serial EEPROM
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MICROCHIP[Microchip Technology]
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24LC02BTI_SNG 24LC02BI_SNG 24LC02BI_OTG 24LC02BI_P |
The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C ... The 24AA02 is a 1K bit Electrically Erasable PROM memory organized as a single block of 256 x 8-bit memory with an I2C compatible 2-wire serial interface bus. The 24AA02 features hardware write protect, Schmitt trigger inp 2K I2C Serial EEPROM
|
MICROCHIP[Microchip Technology]
|
28C256ASC-1 28C256ASC-2 28C256ASC-3 28C256ASC-4 28 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed 250 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
|
Turbo IC
|
BR34L02FV-W |
256 bit Electrically Erasable PROM 256? bit Electrically Erasable PROM
|
Rohm CO.,LTD.
|
BR24L08-W07 |
1024×8 bit electrically erasable PROM
|
Rohm
|
PA7024 PA7024J-15 PA7024J-20 PA7024JI-25 PA7024JN- |
20ns programmable electrically erasable logic array 15ns programmable electrically erasable logic array Programmable Electrically Erasable Logic Array 电可擦除可编程逻辑阵列
|
ICT Electronic Theatre Controls, Inc. ETC[ETC] List of Unclassifed Manufacturers http://
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IS25C02 IS25C04 |
(IS25C02 / IS25C04) 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
IS93C66A |
(IS93C56A / IS93C66A) 2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
M5L27128K |
131072 Bit Erasable and Electrically Reprogrammable ROM
|
Mitsubishi
|