PART |
Description |
Maker |
IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位,每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护每个字节。(1024 × 8位,每个字节带可编程写保护的EEPROM中) 1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM,具有可编程写保护对于每一个字节,两个字节可编程保障法024 × 8位,每个字节带可编程写保护,2字节可编程安全密码的EEPROM中)
|
GTM, Corp. Integrated Silicon Solution, Inc.
|
MSM16911 |
1024 Bit Serial EPROM 1024-BIT SERIAL E-2 PROM
|
OKI electronic componets
|
FM1008-200DC FM1008-200SC FM1008-200PC FMX1308-200 |
1024-16384-bit nonvolatile static RAM family 1024-16384-bit nonvlatile static ram family NVRAM (Ferroelectric Based) NVRAM中(基于铁电
|
Ramtron International Corp. Ramtron International, Corp.
|
CDP1821C CDP1821C3 FN2983 CDP1821C_3 CDP1821CD3 CD |
From old datasheet system High-Reliability CMOS 1024-Word x 1-Bit Static RAM 高可靠性的CMOS 1024字1位静态存储器 High-Reliability CMOS 1024-Word x 1-Bit Static RAM 1K X 1 STANDARD SRAM, 255 ns, CDIP16
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
EN29LV160A EN29LV160AB-70BIP EN29LV160AB-70TIP EN2 |
16 MEGABIT (2048K X 8- BIT / 1024 K X 16-BIT) FLASH MEMORY
|
Eon Silicon Solution Inc. ETC[ETC]
|
CXK1012 CXK1012P |
1024-BIT (128WORD X 8 BIT) NON-VOLATILE MEMORY
|
SONY[Sony Corporation]
|
NM93C46 NM93C46TEN NM93C46TLEM8 NM93C46TLM8 NM93C4 |
1024-Bit Serial CMOS EEPROM (MICROWIRE?Synchronous Bus) 1024-Bit Serial CMOS EEPROM (MICROWIRE?/a> Synchronous Bus) 1024-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus) 1024-Bit Serial CMOS EEPROM (MICROWIRE Synchronous Bus)
|
http:// FAIRCHILD[Fairchild Semiconductor]
|
CXK1007P |
1024-Bit Non-Volatile Memory
|
Sony
|
DS2431X DS2431XS DS2431G DS2431GTR |
1024-Bit, 1-Wire EEPROM
|
Maxim Integrated Products
|
MCM1451L01 |
1024-Bit Static RAM
|
Motorola Semiconductor
|
UPB403C UPB403D UPB423C UPB423D |
1024 BIT BIPOLAR TTL
|
NEC
|
DS2431PR DS2431PT |
1024-Bit 1-Wire EEPROM
|
Maxim Integrated Products
|