PART |
Description |
Maker |
IC62VV25616LL IC62VV25616L IC62VV25616LL-70TI IC62 |
OSC 5V 14PIN TTL 256Kx161.8V和超低功耗CMOS静态RAM 256Kx16 bit 1.8V and Ultra Low Power CMOS Static RAM 256Kx161.8V和超低功耗CMOS静态RAM ASYNCHRONOUS STATIC RAM, Low Power A.SRAM 70ns; 1.8V; 256K x 16 ultra low power CMOS static RAM
|
Integrated Circuit Solu... Fuji Electric Holdings Co., Ltd. ICSI[Integrated Circuit Solution Inc]
|
IS65WV25616DBLL-55CTLA3 IS62WV25616DALL-55TI IS62W |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
IS62WV2568BLL IS62WV2568BLL-55BI IS62WV2568BLL-55B |
256K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
N04L63W1A |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 16 bit
|
ON Semiconductor
|
BH616UV4010 |
Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit
|
Brilliance Semiconductor
|
N02L083WC2AT2 N02L083WC2A N02L083WC2AN N02L083WC2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K x 8 bit
|
etc NANOAMP[NanoAmp Solutions, Inc.] Electronic Theatre Controls, Inc.
|
KM616U4000B |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
T15V2M08A-70P T15V2M08A T15V2M08A-100C T15V2M08A-5 |
256K X 8 LOW POWER CMOS STATIC RAM 256K × 8低功耗CMOS静态RAM
|
Taiwan Memory Technolog... TMT[Taiwan Memory Technology] TM Technology, Inc.
|
BS62UV2006 BS62UV2006TIP85 BS62UV2006DC BS62UV2006 |
Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit 超低功率/电压CMOS SRAM56K × 8 1-To-8 (4 Same Frequency, 4 Divide-By-2) Clock Driver With Clear 20-SSOP Asynchronous 2M(256Kx8) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS62LV2001TI BS62LV2001 BS62LV2001DC BS62LV2001DI |
Very Low Power/Voltage CMOS SRAM 256K X 8 bit Very low power/voltage CMOS SRAM 256K X 8 bit, 70ns Very low power/voltage CMOS SRAM 256K X 8 bit, 100ns
|
Brilliance Semiconducto... BSI[Brilliance Semiconductor]
|