| PART |
Description |
Maker |
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 2SK1228TMG MA3027-LH MA3027TSK MA3150-LTMG MA3360- |
100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2.7 V, 0.2 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
0.1 A, SILICON, SIGNAL DIODE
SILICON, PIN DIODE
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
0.035 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
PANASONIC CORP
|
| SF18 SF12-AP SF12-BP SF14-AP SF16-AP |
1.0 Amp Super Fast Recovery Rectifiers 50 to 600 Volts
1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
Micro Commercial Components
|
| 1N4948-E3-PKG4 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP, LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| SF4001 |
DIODE 1 A, 50 V, SILICON, SIGNAL DIODE, HALOGEN FREE AND ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
| BAL99LT1G BAL99LT1 BAL99L |
Small Signal Diode
From old datasheet system
SWITCHING DIODE 0.1 A, 70 V, SILICON, SIGNAL DIODE, TO-236AB
|
ONSEMI[ON Semiconductor]
|
| BAT54-HT3 |
DIODE 0.2 A, 30 V, SILICON, SIGNAL DIODE, PLASTIC, LLP75-3B, 3 PIN, Signal Diode
|
Vishay Semiconductors
|
| IMBD4448/E8 IMBD4448-E9 |
DIODE 0.15 A, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
GENERAL SEMICONDUCTOR INC
Vishay Semiconductors
|
| BAS40 |
DIODE 0.2 A, 40 V, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3, Signal Diode
|
Vishay Semiconductors
|
| JANS1N6663 |
Signal or Computer Diode; Package: B; IO (A): 0.5; IFSM (A): 5; Cj (pF): 20; Vrwm (V): 600; VF (V): 1; IR (µA): 0.05; 0.5 A, SILICON, SIGNAL DIODE, DO-35
|
Microsemi, Corp.
|
|
