| PART |
Description |
Maker |
| MRF5S9101NBR1 MRF5S9101NR1 |
GSM/GSM EDGE LATERAL N-CHANNEL RF POWER MOSFETs
|
Freescale Semiconductor
|
| MHVIC915R2 |
CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
|
Motorola
|
| MW5IC2030MBR1 MW5IC2030GMBR1 |
RF LDMOS Wideband Integrated Power Amplifiers 1930 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
1930–1990 MHz, 30 W, 26 V GSM/GSM EDGE, W–CDMA, PHS RF LDMOS Wideband Integrated Power Amplifier
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| AWT6172RM33P8 AWT6172RM33P9 AWT6172HM33P8 AWT6172H |
GSM/GPRS/EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| MAX4473 MAX4473ESA MAX4473EUA |
Low-Cost / Low-Voltage / PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin レMAX
Low-Cost Low-Voltage PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin MAX
Low-Cost, Low-Voltage, PA Power Control Amplifier for GSM Applications in 8-Pin μMAX
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| CGY2010G CGY2011G |
GSM 4 W power amplifiers
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| RF5110G07 RF5110GTR7 |
3V GSM POWER AMPLIFIER
|
RF Micro Devices
|
| AWT6280RM11P8 AWT6280RM11P9 |
Quad-band GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc
|
| SS8000GQTR SS8000GQTY |
GSM Power-Management System
|
Silicon Standard Corp.
|
