PART |
Description |
Maker |
FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射,抗SEGR N沟道功率MOSFET(抗辐射沟道马鞍山场效应管) Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
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INTERSIL[Intersil Corporation] Intersil, Corp.
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HCTS393MS HCTS393KMSR HCTS393K HCTS393HMSR HCTS393 |
Radiation Hardened Dual 4-Input NOR Gate Test Bus Controllers 68-CPGA -55 to 125 Test Bus Controllers 68-CFP -55 to 125 Radiation Hardened Octal D-Type Flip-Flop/ Three-State/ Positive Edge Triggered Radiation Hardened Dual 4-Stage Binary Counter From old datasheet system
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INTERSIL[Intersil Corporation]
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IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V,P通道表面安装抗辐射功率MOSFET00V的电压,P沟道表贴型抗辐射功率马鞍山场效应管) From old datasheet system RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
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International Rectifier, Corp.
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HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大 CONNECTOR ACCESSORY Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8 Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
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Intersil Corporation Intersil, Corp. http://
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FSYC9160R FSYC9160R1 FSYC9160R3 FSYC9160R4 FSYC916 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs From old datasheet system Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 47 A, 100 V, 0.053 ohm, P-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation] Intersil, Corp.
|
FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp. INTERSIL[Intersil Corporation]
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SM602HRR SM600HRR SM612 SM600 SM610 SM612R SM600R |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS SPECIALTY ANALOG CIRCUIT, MBCY4 RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效,5安培开关稳压器
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MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP Microsemi, Corp. MICROSEMI[Microsemi Corporation] http://
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IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
2N7632UC IRHLUC7630Z4 IRHLUC7670Z4 IRHLUC7670Z4-15 |
RADIATION HARDENED60V, Combination 1N-1P-CHANNELLOGIC LEVEL POWER MOSFET RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT Simple Drive Requirements
|
International Rectifier
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