| PART |
Description |
Maker |
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SC4210 E000916 |
From old datasheet system
NPN EPITAXIAL TYPE (AUDIO POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC466607 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC420707 2SC4207 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| HN1B01FU |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC4944 2SC494407 |
Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplefier Applications
|
Toshiba Semiconductor
|
| 2SC332407 2SC3324 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC2240 |
Transistor Silicon NPN Epitaxial Type (PCT process) Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| HN1B01F07 |
Silicon NPN Epitaxial Type (PCT Process) Audio-Frequency General-Purpose Amplifier Applications
|
Toshiba Semiconductor
|
| 2SC3421 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS
|
TOSHIBA
|
| 2SC473807 |
Silicon NPN Epitaxial Type (PCT process) Audio Frequency General Purpose Amplifier Applications
|
Toshiba Semiconductor
|
