| PART |
Description |
Maker |
| KTX401U |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE (GENERAL PURPOSE, ULTRA HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| MAZD056 MAZD024 MAZD062 MAZD036 MAZD039 |
Silicon planar type 5.6 V, 0.12 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
Panasonic, Corp.
PANASONIC CORP
|
| MA2C185 MA185 |
Silicon epitaxial planar type 0.2 A, 250 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA3S795E |
Silicon epitaxial planar type 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp.
Panasonic Semiconductor
|
| MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
| MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 1SS104 |
SILICON PLANAR TYPE DIODE
|
TOSHIBA[Toshiba Semiconductor]
|
| MA2B27QB MA2B027 MA2B0270A MA2B0270B MA2B027B MA2B |
Silicon epitaxial planar type variable resistor SILICON, PIN DIODE, DO-35
CANKPT02E16-26SX
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| MA2C179 MA178 MA179 MA2C178 |
Silicon epitaxial planar type 0.2 A, 80 V, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MA2C188 MA188 |
Silicon epitaxial planar type 0.2 A, SILICON, SIGNAL DIODE, DO-34
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| 1N916 1N916A 1N916B |
Silicon epitaxial planar type diode.
|
Panasonic
|
| KTX411TY KTX411T KTX411TGR |
EPITAXIAL PLANAR NPN TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
|
KEC[KEC(Korea Electronics)]
|
