PART |
Description |
Maker |
W971GG8JB-12 W971GG8JB-3 W971GG8JB25A W971GG8JB-25 |
16M x 8 BANKS x 8 BIT DDR2 SDRAM
|
Winbond
|
W9751G8JB |
16M X 4 BANKS X 8 BIT DDR2 SDRAM
|
Winbond
|
W632GG6KB-15 W632GG6KB-11 |
16M X 8 BANKS X 16 BIT DDR3 SDRAM 16M X 8 BANKS X 16 BIT DDR3 SDRAM
|
Winbond
|
HYS64V16302GU-8-C2 HYS64V16302GU HYS64V16302GU-75- |
3.3 V 16M × 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules 3.3 V 16M 】 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life 3.3 V 16M 64-Bit/ 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules SDRAM|16MX64|CMOS|DIMM|168PIN|PLASTIC 3.3 V 16M 64-Bit, 128MByte SDRAM Module 168-pin Unbuffered DIMM Modules
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
HYS64V16300GU-7-C2 HYS64V16300GU-7.5-C2 HYS64V3222 |
3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模3.332M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 3.3 V 16M x 64/72-Bit 1 Bank 128MByte SDRAM Module 3.3 V 32M x 64/72-Bit 2 Bank 256MByte SDRAM Module 168-Pin Unbuffered DIMM Modules 3.36米x 64/72-Bit 1银行128MByte SDRAM的模.32M的x 64/72-Bit 2银行256MB的内存模68引脚无缓冲DIMM模块 32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168 32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
Infineon Technologies AG Infineon Technologies A...
|
HY57V561620B HY57V561620BLT-6I HY57V561620BLT-8I H |
SDRAM - 256Mb 4 Banks x 4M x 16Bit Synchronous DRAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
W981208AH |
4M x 8 bit x 4 Banks SDRAM
|
Winbond Electronics
|
W982508AH |
8M X 4 BANKS X 8 BIT SDRAM
|
WINBOND[Winbond]
|
W942508CH W942508CH-75 W942508CH-5 W942508CH-6 W94 |
DDR SDRAM (Double Data Rate) 8M x 4 BANKS x 8 BIT DDR SDRAM
|
Winbond Electronics WINBOND[Winbond]
|
K4S510832M K4S510832M-TC_TL1H K4S510832M-TC_TL1L K |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet 16M x 8bit x 4 Banks Synchronous DRAM LVTTL 1,600 × 8位4银行同步DRAM LVTTL
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|