PART |
Description |
Maker |
U20C60 U20C30 U20C40 U20C50 |
POWER RECTIFIERS(20A/300-600V) POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
F16C60 F16C40 F16C30 F16C50 |
POWER RECTIFIERS(16A/300-600V) POWER RECTIFIERS(16A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
F08A60 F08A30 F08A40 F08A50 |
FAST RECOVERY RECRIFIERS(8A,300-600V) FAST RECOVERY RECRIFIERS(8A/300-600V)
|
MOSPEC[Mospec Semiconductor]
|
MJE585006 MJE5850G MJE5852G MJE5850 MJE5851 MJE585 |
8 AMPERE PCP SILICON POWER TRANSISTORS 300 - 350 - 400 VOLTS 80 WATTS 8 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
ONSEMI[ON Semiconductor]
|
H30D60 H30D30 H30D40 H30D50 |
HIGH EFFICIENCY RECTIFIERS(30A/300-600V) HIGH EFFICIENCY RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
|
IRFUC20 IRFRC20 IRFUC20PBF |
600V Single N-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.0A) (IRFRC20 / IRFUC20) Power MOSFET
|
IRF[International Rectifier]
|
APT6015JN APT6018JN |
POWER MOS IV 600V 38.0A 0.15 Ohm / 600V 35.0A 0.18 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
PRHMB300A61 PRHMB300A6 |
IGBT MODULE Chopper 300A 600V 300 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. Nihon Inter Electronics Corporation
|
FMG1G300US60HE |
300 A, 600 V, N-CHANNEL IGBT 7PM-HA, 7 PIN 600V, 300A IGBT Module (Molding Type)
|
Fairchild Semiconductor, Corp.
|