PART |
Description |
Maker |
LD242 LD242-2 LD242-3 LD242E7800 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter Lead (Pb) Free Product - RoHS Compliant
|
OSRAM GmbH
|
SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器 Ternary PIN Photodiode in TO-Package with Integrated Optics From old datasheet system
|
SIEMENS A G Infineon Technologies AG SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
Q62703-Q256 LD271H LD271HL Q62703-Q838 Q62703-Q148 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH405 SFH40512 Q62702P0835 |
GaAs-IR-Lumineszenzdiode
|
OSRAM GmbH
|
SFH4205 |
(SFH4200 / SFH4205) Schnelle GaAs-IR-Lumineszenzdiode
|
Infineon Technologies
|
TG2211FT |
RF SPDT Switch TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
CF750 Q62702-F1391 |
From old datasheet system GaAs MMIC (Biased Dual Gate GaAs FET) 砷化镓微波单片集成电路(偏置双门砷化镓场效应管)
|
Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
TG2213S |
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
SBB-5089Z SBB-5089 |
0.05-6 GHz, Cascadable Active Bias InGaP/GaAs HBT MMIC Amplifier 0.05-6千兆赫,级联有源偏置的InGaP / GaAs HBT的MMIC放大
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc. http:// ETC[ETC]
|
PD-8351-X PD-8350-F PD-8351-S PD-8350-X PD-8350-T |
Mini-Size GaAs PIN PD MODULE GaAs PIN PHOTODIODE WITH SINGLE-MODE FIBER PIGTAIL 迷你尺寸GaAs PIN型帕金森模块砷化镓PIN光电二极管与单模光纤尾纤
|
Optoway Technology Inc. Optoway Technology, Inc.
|
MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET L S BAND POWER GaAs FET From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|