| PART |
Description |
Maker |
| CXK5T8512TM/TN-10LLX CXK5T8512TM/TN-12LLX CXK5T851 |
64K X 8 STANDARD SRAM, 120 ns, PDSO32
65536-word x 8-bit High Speed CMOS Static RAM
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| M5M51016BRT-10VL-I M5M51016BRT-10VLL-I M5M51016BTP |
From old datasheet system
1048576-BIT CMOS STATICRAM
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
1048576-bit (65536-word by 16-bit) CMOS static RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| TC551664AJ |
65536 Word x 16-Bit CMOS Static RAM
|
Toshiba Semiconductor
|
| CXK5T16100TM-12LLX |
65536-word x 16-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5V8512TM-10LLX CXK5V8512TM-85LLX |
65536-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM |
128 x 64 pixel format, LED Backlight available
-65536-word x 18-bit High Speed Bi-CMOS Static RAM
|
SONY[Sony Corporation]
|
| M5M4416P M5M4416P-12 M5M4416P-15 |
65536 Bit (16384 Word by 4 Bit) Dynamic Ram
65,536-BIT (16,384-WORD BY 4-BIT) DYNAMIC RAM
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
| GM71C4256A GM71C4256A-10 GM71C4256A-60 GM71C4256A- |
262144 word x 4 Bit CMOS DRAM
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
|
| HN62408 HN62408FP HN62408P |
524288-WORD X 16-BIT/1048576-WORD X 8-BIT CMOS MASK PROGRAMMABLE ROM 524288字16-BIT/1048576-WORD × 8位CMOS掩膜可编程ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| UPD27C512 |
65536 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
