| PART |
Description |
Maker |
| M27V101 |
NND - 1 MBIT (128KB X8) LOW VOLTAGE UV EPROM & OTP EPROM
|
ST Microelectronics
|
| M27C202-100B1TR M27C202-100B3TR M27C202-100B6TR M2 |
From old datasheet system
2 Mbit (128Kb x16) UV EPROM and OTP EPROM
CAP .18UF 400V POLYPROPYLENE
RES 200-OHM 5% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM
2 Mbit 128Kb x16 UV EPROM and OTP EPROM 2兆位存储28KB的x16紫外线和OTP存储
8-Pin SOIC Dual-Channel Low Current High Gain Split Darlington Output Optocoupler 2兆位存储28KB的x16紫外线和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
HIROSE ELECTRIC Co., Ltd.
|
| M48Z128 M48Z128-120CS1 M48Z128-120PM1 M48Z128-70CS |
1 Mbit 128Kb x8 ZEROPOWER SRAM 1兆位的SRAM 128KB的x8 ZEROPOWER
1 Mbit (128Kb x8) ZEROPOWER SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| M29W200 M29W200BB M29W200BT M29W200BB70N6T M29W200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPSE 19C 19#20 PIN RECP
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，引导块低压单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| CY7C1021B-15VXC CY7C1021B-15VXE CY7C1021B-15VXI CY |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1334H-133AXC CY7C1334H-133AXI CY7C1334H-166AXC |
2-Mbit (64K x 32) Pipelined SRAM with NoBL?/a> Architecture
2-Mbit (64K x 32) Pipelined SRAM with NoBLArchitecture
2-Mbit (64K x 32) Pipelined SRAM with NoBL Architecture
2-Mbit (64K x 32) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor Corp.
|
| M48T128V M48T128Y 5746 |
3.3V-5V 1 Mbit (128Kb x 8) TIMEKEEPER ? SRAM
From old datasheet system
|
STMicro
|
| CY14B101L-SZ35XC |
1 Mbit (128K x 8) nvSRAM; Organization: 128Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 1 Mb; Package: SOIC
|
CYPRESS SEMICONDUCTOR CORP
|
| CY7C1021CV33-10ZXIT CY7C1021CV33-12VIT |
1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 3.0 to 3.6 V; 64K X 16 STANDARD SRAM, 10 ns, PDSO44
64K X 16 STANDARD SRAM, 12 ns, PDSO44
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| M29W200BB55N6T M29W200BB70M1 M29W200BB70N6 M29W200 |
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| M29W200BB M29W200BT 6616 |
2 Mbit (256Kb x8 or 128Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
STMicro
|
