PART |
Description |
Maker |
K4S560432J |
256Mb J-die SDRAM Specification
|
Samsung semiconductor
|
K4T56163QI K4T56163QI-ZCLCC K4T56163QI-ZCLD5 K4T56 |
256Mb I-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
K4H560838D-TCC4 K4H560838D-TCCC K4H561638D-TCCC K4 |
256Mb D-die DDR400 SDRAM Specification 256Mb芯片支持DDR400内存规格
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4H560838E-NLB3 K4H560438E-NC K4H560438E-NC_LA2 K4 |
256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
|
SAMSUNG[Samsung semiconductor]
|
K4H560838H |
(K4H560438H - K4H561638H) 256Mb H-die DDR SDRAM Specification
|
Samsung semiconductor
|
HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04 DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04 DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04 200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
K5D5657DCM-F015 K5D5657DCM-F0CL |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM MCP / 256Mb NAND and 256Mb Mobile SDRAM
|
SAMSUNG[Samsung semiconductor] Samsung Electronics
|
HYB39S256800CT-8 HYB39S256400CT-7.5 HYB39S256800CT |
256Mb (64M x 4) PC133 3-3-3 256Mb (32M x 8) PC133 3-3-3 256Mb (32M x 8) PC100 2-2-2 56Mb的(32M的8)PC100-2-2 x16 SDRAM x16内存
|
Toshiba, Corp. SIEMENS AG
|
HY57V561620BT-H HY57V561620BL/ST-H HY57V561620BL/S |
SDRAM - 256Mb IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
|
Hynix Semiconductor
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|