| PART |
Description |
Maker |
| JDP2S02AS |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S02S07 JDP2S02S |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP4P02U07 JDP4P02U |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| JDP2S04E |
VHF~UHF Band RF Attenuator Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| MT6C04AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 2SC5088 |
NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOESE AMPLIFIER APPLICATIONS)
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5544YZ-TR-E 2SC5544YZ-TL-E |
Silicon NPN Epitaxial VHF / UHF wide band amplifier
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR 1.40 X 0.80 MM, 0.59 MM HEIGHT, MODIFIED SC-89, MFPAK-3
|
Renesas Electronics Corporation
|
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| 2SC4320 E000939 |
From old datasheet system
VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
NPN EPITAXIAL PLANAR TYPE (VHF~ UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3074 EE08686 |
N CHANNEL MOS TYPE (RF POWER MOSFET FOR VHF- AND UHF-BAND POWER AMPLIFIER)
From old datasheet system
RF POWER MOSFET FOR VHF - AND UHF-BAND POWER AMPLIFIER
|
Toshiba Semiconductor
|
