| PART |
Description |
Maker |
| RFH25P08 RFK25P08 RFK25P10 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs 25 A, 80 V, 0.15 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-218AC
-25A/ -100V and -80V/ 0.150 Ohm/ P-Channel Power MOSFETs
-25A -100V and -80V 0.150 Ohm P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| RFL1P08 RFL1P10 |
1 A, -80V and -100V, 3.65 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor P...
|
| RFL1N10 RFL1N08 |
1A, 80V and 100V, 1.200 Ohm, N-Channel, Power MOSFETs
1A/ 80V and 100V/ 1.200 Ohm/ N-Channel/ Power MOSFETs
1A 80V and 100V 1.200 Ohm N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| RFK25P08 RFH25P08 RFH25P10 |
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| RFP2N10L |
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs
|
Fairchild Semiconductor
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| CDBHM2100L-G CDBHM220L-G CDBHM240L-G CDBHM280L-G C |
Bridge Rectifiers, V-RRM=100V, V-DC=100V, I-(AV)=2A
Bridge Rectifiers, V-RRM=20V, V-DC=20V, I-(AV)=2A
Bridge Rectifiers, V-RRM=40V, V-DC=40V, I-(AV)=2A
Bridge Rectifiers, V-RRM=80V, V-DC=80V, I-(AV)=2A
Bridge Rectifiers, V-RRM=90V, V-DC=90V, I-(AV)=2A
Bridge Rectifiers, V-RRM=60V, V-DC=60V, I-(AV)=2A
Bridge Rectifiers, V-RRM=50V, V-DC=50V, I-(AV)=2A
Bridge Rectifiers, V-RRM=30V, V-DC=30V, I-(AV)=2A
|
Comchip Technology
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| C7860M7628-3000 C7860M7628-1035 C7860M7628-1070 C7 |
INput current: 5A; 3Vdc: 80V; deuterium lamp
INput current: 10A; 0.8Vdc: 80V; deuterium lamp
INput current: 10A; 1.2Vdc: 80V; deuterium lamp
INput current: 15A; 0.5Vdc: 80V; deuterium lamp
INput current: 4A; 2.5Vdc: 80V; deuterium lamp
|
Hamamatsu Corporation
|
| NTMD6601NR2G NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8
NFET S08D 80V
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
|
ON Semiconductor
|
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