PART |
Description |
Maker |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
KSE80001 KSE802 KSE803 KSE800 |
Monolithic Construction With Built-in Base-Emitter Resistors
|
Fairchild Semiconductor
|
OP750D OP750A OP750B OP750C |
NPN Pho totransistor with Base- Emitter Resistor
|
OPTEK[OPTEK Technologies]
|
2SB468 |
GERMANIUM PNP DIFFUSED BASE ALLOYED EMITTER
|
Unknow
|
TIP127 TIP125 TIP126 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd. TAI-SAW TECHNOLOGY CO.,...
|
BSS63R |
SOT23 PNP silicon planar Emitter-base voltage VEBO -6 V
|
TY Semiconductor Co., Ltd
|
Q62702-F1287 Q62702-F1240 BF840 BF841 |
NPN Silicon RF Transistors (Suitable for common emitter RF/ IF amplifiers Low collector-base capacitance due to contact shield diffusion) NPN Silicon RF Transistors (Suitable for common emitter RF IF amplifiers Low collector-base capacitance due to contact shield diffusion) From old datasheet system NPN Silicon RF Transistors (Suitable for common emitter RF, IF amplifiers Low collector-base capacitance due to contact shield diffusion)
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
KGEA-BFCAM KGEA-BFCAM-B-0207-G KGEA-BFCAM-B-0207-J |
Emitter Antenna Low Profile 85x13x7mm Housing Plastic Base-Potted and Outside Connector unsealed&sealed Emitter Antenna Low Profile 85x13x7mm Housing plastic base-potted and outside connector unsealed & sealed
|
PREMO CORPORATION S.L
|
TIP117F |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
MJD112L MJD112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|