| PART |
Description |
Maker |
| 2SK3391JXTL-E 2SK339107 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK2596BX 2SK2596 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK2595 |
Silicon N-Channel MOS FET UHF Power Amplifier
|
Renesas Electronics Corporation
|
| 2SK1739A EA09775 |
RF POWER MOS FET for UHF TV ROADCAST TRANSMITTER
From old datasheet system
|
Toshiba
|
| 2SK2795 |
From old datasheet system
Silicon N Channel MOS FET UHF Power Amplifier
|
Hitachi Semiconductor
|
| 2SK3175A |
Silicon N Channel MOS FET UHF Power Amplifier
From old datasheet system
|
HITACHI[Hitachi Semiconductor]
|
| BB504C |
Bias Controlled Monolithic IC UHF RF Amplifier
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
|
Hitachi Semiconductor
|
| MRF134 |
N-CHANNEL MOS BROADBAND RF POWER FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK32 |
Switching N-channel power MOS FET industrial use N沟道 开关功率场效应晶体工业
From old datasheet system
N-ch Power MOS FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB506MFS-TL-E BB506M |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
