| PART |
Description |
Maker |
| TDA8928J TDA8928ST |
Power stage 2 x 10 or 1 x 20 W class-D audio amplifie
|
Philips Semiconductors
|
| KSC2690 KSC2690A |
NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| KTA1704 |
EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER/HIGH FREQUENCY POWER)
EPITAXIAL PLANAR PNP TRANSISTOR (AUDIO FREQUENCY POWER,HIGH FREQUENCY POWER)
|
KEC[KEC(Korea Electronics)]
|
| 2SA1048L |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications
|
TOSHIBA
|
| KSA1220A KSA1220 KSA1220AOS KSA1220AYS KSA1220AYST |
PNP Epitaxial Silicon Transistor
Audio Frequency Power Amplifier High Frequency Power Amplifier 1.2 A, 160 V, PNP, Si, POWER TRANSISTOR, TO-126
|
Fairchild Semiconductor, Corp.
|
| KSC2785 KSC2785GBU KSC2785GTA KSC2785LTA KSC2785OB |
Audio Frequency Amplifier & High Frequency OSC.
Audio Frequency Amplifier High
NPN Epitaxial Silicon Transistor
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSD794A KSD794 |
Audio Frequency Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSD882 KSD882R KSD882O KSD882G KSD882Y |
Audio Frequency Power Amplifier
|
FAIRCHILD[Fairchild Semiconductor]
|
| KSA1142 |
PNP (AUDIO FREQUENCY POWER AMPLIFIER)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| 2SC3422 E000844 |
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER/ LOW SPEED SWITCHING)
NPN EPITAXIAL TYPE (AUDIO FREQUENCY POWER AMPLIFIER, LOW SPEED SWITCHING)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SJ106 E001251 |
From old datasheet system
AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS
P CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA135907 2SA1359 |
Audio Frequency Power Amplifier Low-Speed Switching
|
Toshiba Semiconductor
|
