| PART |
Description |
Maker |
| 0475960133 |
0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket,0.76μm (30μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree
|
Molex Electronics Ltd.
|
| HUF76633P312 |
38A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET? Power MOSFET
|
Fairchild Semiconductor
|
| SC200..5.SERIES |
SCHOTTKY DIE 200 x 200 mils
|
International Rectifier
|
| SC202 SC202H100A5 SC202SXXXA5 |
Schottky Die 200 x 200 Mils
|
International Rectifier
|
| AT24C512-W2.7-11 |
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
|
ATMEL CORP
|
| AM79C401JC |
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE) 协议控制
|
Panasonic Industrial Solutions
|
| IRF5EA1310 IRF5EA1310PBF |
23 A, 100 V, 0.036 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
International Rectifier
|
| APT30M36JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
POWER MOS 7 300V 76A 0.036 Ohm
|
Advanced Power Technology Ltd.
|
| PUMA2U8002I-25 PUMA2U8002I-20 PUMA2U8002M-15 PUMA2 |
DIE SALE, 1.8V,11MIL(SERIAL EE)
x32 EPROM Module
10MS, DIE, 2.7V, 11 MILS THICKNESS(SERIAL EE)
8-TSSOP, PB/HALO FREE,NiPdAu, 1.8V(SERIAL EE)
8 TSSOP, PB/HALO FREE, IND TEMP, 1.8V(SERIAL EE) X32号存储器模块
8-SAP,PB/HALO FREE,IND TEMP,2.7V(SERIAL EE) X32号存储器模块
|
NXP Semiconductors N.V.
Amphenol, Corp.
|
| SB073P150-W-AG SB073P150-W-AG_AL SB073P150-W-AG/AL |
Schottky Barrier Diode Wafer 73 Mils, 150 Volt, 5 Amp
|
TRANSYS Electronics Limited
|
| SB039C025-0.5-W-AG |
Schottky cr Barrier Diode Wafer 39 Mils, 25 Volt, 0.5 Amp, 0.34VF.
|
TRANSYS Electronics Limited
|
| SB040P150-W-AG SB040P150-W-AL |
Schottky Barrier Diode Wafer 40 Mils, 150 Volt, 1 Amp
|
TRANSYS Electronics Limited
|
