PART |
Description |
Maker |
IDT72V70800 IDT72V70800TF IDT72V70800PF |
512 x 512 Time Slot Interchange Digital Switch, 3.3V TSI-TDM Switches 3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 512 x 512
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IDT[Integrated Device Technology]
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LH28F800SGH-L LH28F800SG-L |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines 8 M位(512 KB的16)SmartVoltage闪存 8 M-bit (512 kB x 16) SmartVoltage Flash Memories 8 M位(512 KB的16)SmartVoltage闪存
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Sharp Corporation Sharp, Corp.
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LH540225 |
512 x 18 / 1024 x 18 Synchronous FIFO 512 ×一千?二十四分之一十八× 18同步FIFO
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Sharp, Corp.
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AM27S31ADC AM27S31JC AM27S31ALC |
512 X 8 OTPROM, 35 ns, CDIP24 512 X 8 OTPROM, 55 ns, PQCC28 512 X 8 OTPROM, 35 ns, CQCC32
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ADVANCED MICRO DEVICES INC
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IDT7202LA IDT7202LA120D IDT7202LA120DB IDT7202LA12 |
CMOS ASYNCHRONOUS FIFO 256 x 9 512 x 9 1K x 9 60A, 400V UItrafast Rectifier; Package: TO-247; No of Pins: 2; Container: Rail CMOS ASYNCHRONOUS FIFO 256 x 9 / 512 x 9 / 1K x 9 CMOS ASYNCHRONOUS FIFO 256 x 9/ 512 x 9/ 1K x 9 20 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor Ultrafast IGBT RES 205K-OHM 1% 0.063W 100PPM THK-FILM SMD-0402 TR-7-PA2MM 400V N-Channel Logic Level IGBT; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 30A/200V Ultra Fast Recovery Rectifier Co-Pak; Package: TO-3P; No of Pins: 3; Container: Rail 6A/1500V Damper and 20A/600V Modulation Diode; Package: TO-220F; No of Pins: 3; Container: Rail Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Rail Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel High Performance Amplifier; Package: TSSOP; No of Pins: 14; Container: Tape & Reel High Performance Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel High Performance Multiplexer; Package: SOIC; No of Pins: 14; Container: Tape & Reel Quad, High Speed, 2.7V to 12V, Rail to Rail Amplifier; Package: SOIC; No of Pins: 14; Container: Tape & Reel High Performance Multiplexer; Package: TSSOP; No of Pins: 14; Container: Tape & Reel S-Interface 16 Pin DIP (BSEN60950), RoHS compatible CMOS异步FIFO56 × 912 × 9,每1000 × 9 Single, High Speed, 2.5V to 12V, Rail to Rail Amplifier CMOS异步FIFO56 × 912 × 9,每1000 × 9 1200V NPT-Trench IGBT; Package: TT3P0; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 15 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 15 ns, PDSO28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 80 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 CMOS异步FIFO56 × 912 × 9,每1000 × 9 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 12 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 35 ns, PDSO28 1200V NPT IGBT; Package: TO-264; No of Pins: 3; Container: Rail 1K X 9 OTHER FIFO, 35 ns, PDSO28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 30 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 30 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CQCC32 1200V NPT-Trench IGBT CMOS异步FIFO56 × 912 × 9,每1000 × 9 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 120 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 120 ns, PDSO28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 25 ns, CDIP28 Octal Buffers And Line/MOS Drivers With 3-State Outputs 20-SOIC -40 to 85 CMOS异步FIFO56 × 912 × 9,每1000 × 9 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 65 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 512 X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 50 ns, CDFP28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 40 ns, PDSO28 CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9, 1K x 9 1K X 9 OTHER FIFO, 65 ns, PQCC32
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INTEGRATED DEVICE TECHNOLOGY INC IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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S9736-15 |
512 x 512 pixels, front-illuminated FFT-CCDs
|
Hamamatsu Corporation
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7C420-65 7C433-65 7C425-20 7C425-65 7C425-40 7C425 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 256/512/1K/2K/4K × 9异步FIFO 256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PDIP28 256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 65 ns, PQCC32
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
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CY7C425-65PC CY7C425-25VI CY7C429-25JI CY7C421-65J |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, CDIP28 256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, CDIP28 256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PQCC32 256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, PQCC32 256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, PQCC32 256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 25 ns, PDSO28 256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PDIP28 256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 30 ns, PDSO28
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Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|
R1LP0408CSP-7LC R1LP0408C-C R1LP0408CSB-5SC R1LP04 |
4M SRAM (512-kword ??8-bit) 4M SRAM (512-kword 8-bit) 4M SRAM (512-kword × 8-bit) 4M SRAM (512-kword 】 8-bit) Memory>Low Power SRAM
|
Renesas Electronics Corporation. RENESAS[Renesas Electronics Corporation]
|
63S481ALXXXX 53S481AF883B |
512 X 8 OTPROM, 30 ns, MQCC20 512 X 8 OTPROM, 40 ns, MQFP20
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MONOLITHIC MEMORIES
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IDT72V201L20J IDT72V201L20JI IDT72V211L20J IDT72V2 |
512 x 9 SyncFIFO, 3.3V 3.3 VOLT CMOS SyncFIFO 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3 VOLT CMOS SyncFIFO⑩ 256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 11C 11#16 SKT RECP BOX RM 3.3 VOLT CMOS SyncFIFO 256 x 9/ 512 x 9/ 1/024 x 9/ 2/048 x 9/ 4/096 x 9 and 8/192 x 9 3.3 VOLT CMOS SyncFIFO256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 3.3伏的CMOS SyncFIFO56 × 912 × 9,024 × 9,048 × 9,096 × 9,192 × 9 GT 6C 3#4 3#16 SKT RECP WALL 1K X 9 OTHER FIFO, 6.5 ns, PQCC32 GT 7C 7#16S PIN RECP 3.3 VOLT CMOS SyncFIFO??256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9 GT 8C 8#16 SKT RECP WALL GT 3C 3#16S PIN RECP WALL GT 4C 4#12 PIN PLUG 3.3 VOLT CMOS SyncFIFO?256 x 9, 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 and 8,192 x 9
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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