| PART |
Description |
Maker |
| IRF130-133 IRF131 IRF132 IRF133 IRF532 IRF533 IRF5 |
N-Channel Power MOSFETs 20 A 60-100 V
N-Channel Power MOSFETs/ 20 A/ 60-100 V
CAP 220PF 200V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
N-Channel Power MOSFETs, 20 A, 60-100 V N沟道功率MOSFET0甲，60-100 V
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXFH80N20Q IXFK80N20Q IXFT80N20Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
TRANSISTOR|MOSFET|N-CHANNEL|200VV(BR)DSS|80AI(D)|TO-247AD
HiPerFET Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IRFU110 IRFR110 FN3275 |
From old datasheet system
4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs
(IRFR110 / IRFU110) N-Channel Power MOSFETs
|
HARRIS SEMICONDUCTOR
Intersil Corporation
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IRFP244 IRFP245 IRFP246 IRFP247 |
15A and 14A 275V and 250V 0.28 and 0.34 Ohm N-Channel Power MOSFETs
(IRFP244 / IRFP245 / IRFP246 / IRFP247) N-Channel Power MOSFETs
15A and 14A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 15 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| MRF9060MR1 MRF9060MBR1 MRF9060M |
MRF9060MR1, MRF9060MBR1 945 MHz, 60 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs
The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| IXFX120N20 IXFK120N20 |
HiPerFET Power MOSFETs
CAP 0.01UF 50V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXFTN100 IXFX15N100 IXFH14N100 IXFHN100 IXFX14N100 |
HiPerFET Power MOSFETs 14 A, 1000 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IXFN180N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电00V,导通电0mΩ的N沟道增强型HiPerFET功率MOSFET)
HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
| IXFM12N100 IXFH10N100 IXFH12N100 IXFH13N100 IXFM10 |
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
HiPerFET Power MOSFETs 12 A, 1000 V, 1.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
HiPerFET Power MOSFETs 13 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
|
